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| (R) SSRP105B1 DUAL ASYMMETRICAL OVERVOLTAGE PROTECTION FOR TELECOM LINE Application Specific Discretes ASDTM MAIN APPLICATIONS Where asymmetrical protection against lightning strikes and other transient overvoltages is required : s Solid-State relays s SLIC with integrated ring generator DESCRIPTION The SSRP105B1 is a dual asymmetrical transient voltage suppressor designed to protect a solid-state ring relay or SLICs with integrated ring generator from overvoltages. The asymmetrical protection configuration is necessary to allow the use of all different types of ringing schemes. SO-8 FUNCTIONAL DIAGRAM FEATURES s s s Dual bi-directional asymmetrical protection Stand-off voltages: q Between Line and Ground +105V for positive voltages -180V for negative voltages q Between Line and Line +180V for positive voltages -180V for negative voltages Peak pulse current: IPP = 50A (5/310s) Holding current: q IH+ = 100mA q IH- = 150mA TIP 1 8 GND NC 2 7 GND NC 3 6 GND RING 4 5 GND COMPLY WITH THE FOLLOWING STANDARDS Peak Surge Voltage (V) ITU-T K20 / K21 VDE0433 IEC61000-4-5 FCC Part 68 BELLCORE GR1089 First level 1500 2000 Level 3 Level 4 1500 800 2500 1000 Voltage Waveform (s) 10/700 10/700 10/700 1.2/50 10/160 10/560 2/10 10/1000 Current Waveform (s) 5/310 5/310 5/310 8/20 10/160 10/560 2/10 10/1000 Required Peak current (A) 38 50 50 100 200 100 500 100 Min. serial resistor to meet standards () 18 10 10 19 TM: ASD is trademarks of STMicroelectronics. October 2002 - Ed: 1A 1/6 SSRP105B1 APPLICATION INFORMATION Fig. 1: Topology of the classical line card protection. R PTC TIP Fig. 2: Classical use of the SSRP105B1. PTC R 2nd 1st LINE PTC stage R SLIC TIP stage RING SLIC (*) PTC R VRING RING SSRP105B1 VRINGBAT Ring generator (*) SLIC with integrated ring generator or Solid-State Relay The classical line card requires protection before the ring relay and a second one for the SLIC (figure 1). The use of new SLICs with integrated ring generator or board based on solid-state ring relay suppresses this second protection (figure 2). Then, the only remaining stage, located between the line and the ring relay, has to optimize the protection. The classical symmetrical first stage protector becomes not sufficient to avoid any circuit destruction during surges. Fig. 3: SSRP105B1 electrical characteristics. a: Line to ground characteristics. The SSRP105B1 device takes into account this fact and is based on asymmetrical voltage characteristics (figure 3a). The ring signal being shifted back by the battery voltage, the SSRP105B1 negative breakover value VBO- is greater than the positive one VBO+. This point guarantees a protection operation very close to the peak of the normal operating voltage without any disturbance of the ring signal. b: Line to line characteristics. I I VBOVBO+ V VBOVBO+ V In addition with the 2 crowbar functions which perform the protection of both TIP and RING lines versus ground, a third cell assumes the differential mode protection of the SLIC. The breakover voltage values of this third cell are the same for both positive and negative parts of the characteristics and are equivalent to the negative breakover voltage value of the TIP and RING lines versus GND cells (figure 3b). 2/6 SSRP105B1 ABSOLUTE MAXIMUM RATINGS (Tamb = 25C) Symbol IPP Parameter Peak pulse current (see note 1) 10 / 1000 s 10 / 560s 5 / 310s 10 / 160s 8 / 20s 2 / 10s tp = 0.2 s tp = 5 s tp = 15 min. Value 35 45 50 60 120 175 8.5 4.5 2.5 0 to + 70 - 55 to + 150 + 150 260 % I PP Unit A ITSM Non repetitive surge peak on-state current (F=50Hz) Operating temperature range Storage temperature range Maximum operating junction temperature Maximum lead temperature for soldering during 10s A Top Tstg Tj TL C C C C Note 1 : Pulse waveform : 10/1000s tr=10s 10/560s tr=10s 5/310s tr=5s 10/160s tr=10s 8/20s tr=8s 2/10s tr=2s tp=1000s tp=560s tp=310s tp=160s tp=20s tp=10s 100 50 0 tr tp t THERMAL RESISTANCE Symbol Rth (j-a) Junction to ambient Parameter Value 170 Unit C/W ELECTRICAL CHARACTERISTICS (Tamb = 25C) Symbol VR IR VBR VBO IH IBO IPP C Parameter Stand-off voltage Leakage current at stand-off voltage Breakdown voltage Breakover voltage Holding current Breakover current Peak pulse current Capacitance IH IR I IPP V VR VBR VBO 3/6 SSRP105B1 ELECTRICAL CHARACTERISTICS between TIP and GND, RING and GND (Tamb=25C) Symbol VBO Parameter Test conditions (note 1) Breakover voltage Positive voltage . 50Hz (note 2) . 10/700s Negative voltage IH IR C Holding current Leakage current (note 3) Capacitance Positive polarity Negative polarity VR = +105 V VR = - 180 V F = 1MHz, VRMS = 1V, VR(T/G) = -5V F = 1MHz, VRMS = 1V, VR(T/G) = -50V 30 16 . 50Hz . 10/700s 100 150 10 10 Min. Typ. Max. 165 165 225 225 mA A pF Unit V ELECTRICAL CHARACTERISTICS between TIP and RING (Tamb=25C) Symbol IR Note 1: Note 2: Note 3: Parameter Leakage current (note 3) Test conditions VR = +180 V VR = - 180 V Min Max 10 10 Unit A Positive voltage means between T and G, or between R and G. Negative voltage means between G and T, or between G and R. See test circuit for VBO parameters IR measured at VR guarantees VBR > VR Fig. 4: Relative variation of holding current versus junction temperature. IH(Tamb)/IH(Tamb=25C) Fig. 5: Non-repetitive peak on-state current versus overload duration (Tj initial = +25C).. ITSM(A) 25 F= 50Hz 1.2 1 0.8 20 15 0.6 0.4 0.2 0 0 20 40 Tamb(C) 60 80 10 5 0 0.01 0.1 1 10 100 1000 tp(s) Fig. 6: Capacitance versus applied reverse voltages (typical values). C(pF) 100 Tj= 25C F= 1MHz Vrms= 1V TIPor RING(+) / GND(-) 10 GND(+) / TIP or RING(-) 1 1 10 VR(V) 100 1000 4/6 SSRP105B1 FUNCTION HOLDING CURRENT (IH) TEST CIRCUIT (GO-NO GO TEST) R D.U.T. V BAT = - 48 V Surge generator This is a GO-NOGO test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : 1) Adjust the current level at the IH value by short circuiting the D.U.T. 2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000s. 3) The D.U.T will come back off-state within 50 ms max. TEST CIRCUIT FOR VBO PARAMETERS: R4 L TIP R2 RING R3 VP C1 R1 C2 GND Pulse (s) tr 10 1.2 2 tp 700 50 10 Vp (V) 1000 1500 2500 C1 (F) 20 1 10 C2 (nF) 200 33 0 L (H) 0 0 1.1 R1 () 50 76 1.3 R2 () 15 13 0 R3 () 25 25 3 R4 () 25 25 3 IPP (A) 38 30 38 Rp () 0 10 62 ORDER CODE SSRP SOLID STATE RELAY PROTECTION 105 B 1 RL PACKAGING: RL = Tape and Reel = Tube PACKAGE: 1 = SO-8 Plastic STAND-OFF VOLTAGE 5/6 SSRP105B1 OTHER INFORMATION Ordering type SSRP105B1 SSRP105B1RL Marking SSR105 Package SO-8 Weight 0.08 g. Base Qty (pcs) Delivery mode 100 2500 Tube Tape & Reel PACKAGE MECHANICAL DATA SO-8 (Plastic) DIMENSIONS REF. h x 45 0.25mm (Gage Plane) Millimetres Min. Max. 1.75 0.25 1.65 0.51 0.25 5.00 4.00 6.20 0.50 1.27 1.35 0.1 1.10 0.33 0.19 4.80 3.80 5.80 0.25 0.40 Inches Min. 0.053 0.004 0.043 0.013 0.007 0.189 0.150 0.228 0.010 0.016 Max. 0.069 0.010 0.065 0.020 0.010 0.197 0.157 0.244 0.019 0.050 ddd C A2 A C (Seating Plane) A A1 A2 B C D B e A1 k L D 8 5 E E H e H h L k ddd 1.27 Typ. 0.05 Typ. 1 4 8 (max) 0.100 0.004 FOOT-PRINT DIMENSIONS (in millimeters) 6.8 0.6 4.2 1.27 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6 |
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